Mo Conductor Forming Technique with Laser Chemical Vapor Deposition (CVD)
Source abstract
Abstract
A reduction in resistivity and an improvement in reliability of Mo conductors formed by laser CVD from Mo(CO)6 gas have been achieved using laser annealing. By establishing a standard of 10 μ Ω • cm, the reduction in resistivity was analyzed by AES (Auger Electron Spectrometry) and XRD (X-ray Diffractometry) methods. Reliability has been confirmed by the stability of resistance when subjected to a heat cycle of −50 – 150°C for more than 70 times.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Semiconductor materials and devices · Metal and Thin Film Mechanics
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Affiliations
Production Engineering Research Laboratory, Hitachi, Ltd., Japan
References
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