journal article·2022-11-01

Laser etching of 2D materials with single-layer precision up to ten layers

Yikun Yao, Xinjia Zhao, Xiangqian Tang, Jianmei Li, Xinyan Shan, Xinghua Lu

Journal of Laser Applications· Volume 34· Issue 4
Publisher page

Abstract

Patterned 2D materials with layer-controlled thickness and precise lateral resolution are of great potential for many applications. Laser etching is a promising technique for large-scale patterning of 2D materials, but better control in film thickness is strongly desired. Here, we explore the dynamic characteristics in the laser etching process in which a local temperature lock phenomenon is observed as laser power reaches the etching threshold. A layer-by-layer etching strategy is then developed based on the temporal evolution of the local temperature as measured by in-situ Raman spectroscopy. Employing such a method in a typical layered material MoS2, we demonstrate thickness control up to ten layers in layer-by-layer laser etching. The local temperature lock during laser etching is explained by thermodynamic simulation of temperature distribution within the 2D material under laser illumination. The influence of substrate thermal conductivity on the thickness of the controlled laser etching has been revealed. The results are valuable for potential applications of 2D material devices built with complex layered structures.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Thermal properties of materials · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences 1 , Beijing 100190, China

School of Physical Sciences, University of Chinese Academy of Sciences 2 , Beijing 100049, China

Collaborative Innovation Center of Quantum Matter 3 , Beijing 100190, China

Songshan Lake Materials Laboratory 4 , Dongguan, Guangdong 523808, China

References (33)

Show source-provided references
1. Nat. Nanotechnol. · 2014 · 9 · 82510.1038/nnano.2014.176 ↗
2. Science · 2016 · 353 · aac943910.1126/science.aac9439 ↗
3. Nat. Nanotechnol. · 2012 · 7 · 49010.1038/nnano.2012.95 ↗
4. Natl. Sci. Rev. · 2015 · 2 · 5710.1093/nsr/nwu078 ↗
5. Nat. Commun. · 2017 · 8 · 166410.1038/s41467-017-01824-6 ↗
6. Chem. Soc. Rev. · 2015 · 44 · 369110.1039/C5CS00106D ↗
7. ACS Nano · 2019 · 13 · 364910.1021/acsnano.9b00277 ↗
8. Small · 2018 · 14 · e180036510.1002/smll.201800365 ↗
9. Nanoscale · 2016 · 8 · 1521310.1039/C6NR02828D ↗
10. Sci. Rep. · 2015 · 5 · 1099010.1038/srep10990 ↗
11. Appl. Phys. Express · 2016 · 9 · 05520110.7567/APEX.9.055201 ↗
12. Sci. Rep. · 2017 · 7 · 450510.1038/s41598-017-04925-w ↗
13. Nano-Micro Lett. · 2013 · 510.1007/BF03353741 ↗
14. Nanotechnology · 2018 · 29 · 50570710.1088/1361-6528/aae366 ↗
15. Nanoscale · 2016 · 8 · 300810.1039/C5NR07401K ↗
16. Nat. Chem. · 2013 · 5 · 26310.1038/nchem.1589 ↗
17. Nat. Nanotechnol. · 2010 · 5 · 57410.1038/nnano.2010.132 ↗
18. ACS Appl. Mater. Interfaces · 2015 · 7 · 1589210.1021/acsami.5b03491 ↗
19. Nanotechnology · 2015 · 26 · 35570610.1088/0957-4484/26/35/355706 ↗
20. Nano Lett. · 2012 · 12 · 318710.1021/nl301164v ↗
21. ACS Appl. Mater. Interfaces · 2019 · 11 · 3938510.1021/acsami.9b14306 ↗
22. ACS Appl. Nano Mater. · 2020 · 3 · 749010.1021/acsanm.0c01104 ↗
23. Microelectron. Eng. · 2016 · 158 · 110.1016/j.mee.2016.01.012 ↗
24. Adv. Mater. · 2017 · 2910.1002/adma.201604121 ↗
25. 2D Mater. · 2020 · 710.1088/2053-1583/aba99f ↗
26. Sci. Rep. · 2017 · 7 · 1553810.1038/s41598-017-15350-4 ↗
27. Nanotechnology · 2019 · 30 · 27530210.1088/1361-6528/ab11ad ↗
28. J. Appl. Phys. · 2020 · 127 · 14530510.1063/1.5112785 ↗
29. Nanoscale · 2017 · 9 · 254110.1039/C6NR09484H ↗
30. J. Phys. Chem. C · 2013 · 117 · 904210.1021/jp402509w ↗
31. 2D Mater. · 2017 · 410.1088/2053-1583/aa6532 ↗
32. J. Phys. Chem. C · 2013 · 117 · 2564310.1021/jp410893e ↗
33. See the supplementary material at https://www.scitation.org/doi/suppl/10.2351/7.0000848 for a temporal Raman shift during laser etching of a thick MoS2 sample; the thermal transfer coefficient between a sample and a SiO2/Si substrate; laser etching of a MoS2 sample transferred onto a 2 nm SiO2/Si substrate; and the defect and precision after laser etching.