FEM modeling of magnetoelectric composites using line elements for thin film structure
Source abstract
Abstract
This study conducts a comprehensive computational analysis of thin film deposited magnetoelectric (ME) composites, focusing on two distinct configurations: the self-biased Ni/(YXl)163° LiNbO 3 /Ni and the non-self-biased Ni/PZT-5H/Ni. This involves employing a multiphysics simulation tool based on the Finite Element Method (FEM). Our FEM modeling utilizes the line elements formulation, to facilitate the simulation of thin magnetostrictive Ni layers (10 µm thick), and integrates a magnetoelastic anhysteretic model to account for the nonlinear interactions within the magnetostrictive coupling. This FEM model is capable of predicting the anhysteretic nonlinear ME behavior and the ME performance under optimal working condition.
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Research context
OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Magnetic Properties and Applications
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Affiliations
Sorbonne Université, CNRS, Laboratoire de Génie Electrique et Electronique de Paris, Paris, France
Université Paris-Saclay, CentraleSupélec, CNRS, Laboratoire de Génie Electrique et Electronique de Paris, Gif-sur-Yvette, France
Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, UMR7588, Paris, France
Funding
agence nationale de la recherche
References (32)
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