Galvanomagnetic Effects in Lateral p+-n Diode Structure
Source abstract
Abstract
The magnetic field influence on the operation of a p+-n diode structure with two base contacts on the upper surface which are laterally and symmetrically positioned relative to the injecting p+ region has been studied using the finite difference method. This analysis is important for the design of bipolar magnetic field sensors. Results for the changes of the potential distribution and of the electron and hole concentrations caused by a magnetic field applied perpendicular to the device cross section are presented. The influence of some geometric (device thickness, distance between electrodes) and physical (carrier mobility, surface recombination rates) parameters on the device operation is studied.
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Research context
OpenAlex topics: Magnetic Field Sensors Techniques · Plasma Diagnostics and Applications · Advancements in Semiconductor Devices and Circuit Design
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Affiliations
Institute of Solid State Physics, Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria
References (8)
Show source-provided references
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