A study on band-gap tailoring for InP based QW structure by ion implantation and plasma enhanced chemical vapor deposition

The band gap of InP based QW structures were tailored by both ion implantation and plasma enhanced chemical vapor deposition (PECVD) with subsequently rapid thermal annealing (RTA). The research results show that the band gap change depends on the ion dose, ion energy, PECVD parameters and annealing condition. The maximum blue shift can be reached to 80 meV by ion implantation. On the other hand, the band gap tailoring of 60 meV can be obtained by PECVD. The formal method shows that a good lateral resolution and reproducibility, but the intensity of the photoluminescence is reduced greatly by the defects during ion implantation. The ban gap shift caused by PECVD still shows the same intensity as grown samples, however, the blue shifts are various with the growing condition of PECVD.