Coexistence of photoresponse and light-induced memresistive characteristics in zinc oxide (ZnO)-reduced graphene oxide (rGO) bilayer thin film
Source abstract
Abstract
We have investigated photo-response as well as resistive switching behaviour in hybrid zinc oxide (ZnO)/reduced graphene oxide (rGO) bilayer thin film, equipped through sol–gel process on an ITO coated glass substrate under the dark and variation of light illumination. This ZnO/rGO photodetector reveals a stout photocurrent dependency on the colour of the lights illuminating (white and red laser light), where the magnitude of photocurrent has been found to increase exponentially with the increase in energy of photons of the incident light. In the same device, we have observed resistive switching behaviour and polarity effect of SET/RESET bias similar to that exhibited by the non-volatile memory device (NVRAM). The Ron (HRS resistance) and Roff (LRS resistance) ratio Ron/Roff is approximately 60 at bias voltage 2 V. We have explained this feature in light of filament formation and biasing effect on it. Photo annealing has been done to reduce GO to rGO for fabricating this device on ITO-coated glass substrate. Our study on electrical characterization of the ITO/ZnO/rGO/Au device explores the coexistence of photo-response and memresistive characteristics, which could be potential for developing multifunctional photodetector with memory effect.
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Research context
OpenAlex topics: ZnO doping and properties · Advanced Memory and Neural Computing · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (40)
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1. Q. Zhu, C. Xie, H. Li, Q. Yang, Comparative study of ZnO nanorod array and nanoparticle film in photoelectric response and charge storage. J. Alloys Comp. 585, 267–276 (2014)10.1016/j.jallcom.2013.09.157 ↗
2. A.M. Bazargan, F. Sharif, S. Mazinani, N. Naderi, High-performance transparent ultraviolet photodetector based on thermally reduced graphene oxide and ZnO thin films. J. Mater. Sci. Mater. Electron. 28, 11108–11113 (2017)10.1007/s10854-017-6896-4 ↗
3. H. Kind, H. Yan, B. Messer, M. Law, P. Yang, Nanowire ultraviolet photodetectors and optical switches. Adv. Mater. 14, 158–160 (2002)10.1002/1521-4095(20020116)14:2<158::AID-ADMA158>3.0.CO;2-W ↗
4. J.H. Lee, H. Chou, G.H. Wen, G.H. Hwang, Complex impedance spectroscopy of manganese oxide thin films. J. Appl. Phys. 107, 023907–023910 (2010)10.1063/1.3273319 ↗
5. S. Hong, J. Park, J. Joon Lee, S. Lee, K. Yun, H. Yoo, S. Kim, Multifunctional molybdenum disulfide flash memory using a PEDOTPSS floating gate. NPG Asia Mater. 13, 38–39 (2021)10.1038/s41427-021-00307-x ↗
6. U. Bhandari, B.A. Ayirizia, Y. Malozovsky, L. Franklin, D. Bagayoko, First principle investigation of electronic, transport, and bulk properties of zinc-blende magnesium sulfide. Electronics 9, 1791 (2020)10.3390/electronics9111791 ↗
7. S. Yin, S.K. Volkman, V. Subramanian, Solution processed silver sulfide filament memories. MRS Online Proc. Libr. 1113, 209 (2008)10.1557/PROC-1113-F02-09 ↗
8. Z. Zhan, L. Zheng, Y. Pan, G. Sun, L. Li, Self-powered, visible-light photodetector based on thermally reduced graphene oxide–ZnO (rGO–ZnO) hybrid nanostructure. J. Mater. Chem. 22, 2589 (2012)10.1039/C1JM13920G ↗
9. M.-J. Lee et al., electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. Nano Lett. 9, 1476–1481 (2009)10.1021/nl803387q ↗
10. C. Wu, T.W. Kim, T. Guo, F. Li, Unique visible-light-assisted field emission of tetrapod-shaped ZnO/reduced graphene-oxide core/coating nanocomposites. Sci. Rep. 6, 38613–38622 (2016)10.1038/srep38613 ↗
11. F.A.L. Sanchez, A.S. Takimi, F.S. Rodembusch, C.P. Bergmann, Photocatalytic activity of nanoneedles, nanospheres, and polyhedral shaped ZnO powders in organic dye degradation processes. J. Alloys Comp. 572, 68–73 (2013)10.1016/j.jallcom.2013.03.258 ↗
12. D. Nath, S.K. Mandal, D. Deb, J.K. Rakshit, P. Dey, J.N. Roy, Light tuning DC and AC electrical properties of ZnO-rGO based hybrid nanocomposite film. J. Appl. Phys. 123, 095115–095122 (2018)10.1063/1.5016098 ↗
13. C.-L. Lin et al., Resistance switching behavior of ZnO resistive random access memory with a reduced graphene oxide capping layer. Jpn. J. Appl. Phys. 54, 04DJ08-6 (2015)
14. G.M. Khanal, G.C. Cardarilli, A. Chakraborty, S. Acciarito, M.Y. Mulla, L. Di Nunzio, R. Fazzolari, M. Re. A ZnO-rGO composite thin film discrete memristor. In IEEE International conference on semiconductor electronics (ICSE), IEEE international conference on semiconductor electronics (ICSE), (2016)10.1109/SMELEC.2016.7573608 ↗
15. M. Xiao, K.P. Musselman, W.W. Duley, N.Y. Zhou, Resistive switching memory of TiO2 nanowire networks grown on Ti foil by a single hydrothermal method. Nano Micro Lett. 9, 1–9 (2017)10.1007/s40820-016-0103-7 ↗
16. H. Yang, J. Li, D. Yu, L. Li, Seed/catalyst free growth and self-powered photoresponse of vertically aligned ZnO nanorods on reduced graphene oxide nanosheets. Cryst. Growth Des. 16, 4831–4838 (2016)10.1021/acs.cgd.6b00034 ↗
17. R. Debnath, P. Dey, S. Singh, J.N. Roy, S.K. Mandal, T.K. Nath, Magnetically tunable alternating current electrical properties of xLa0.7Sr0.3MnO3–(1 − x) ErMnO3 (x = 0.1, 0.3, and 0.5) multiferroic nanocomposite. J. Appl. Phys. 118, 044104–044111 (2015)10.1063/1.4927523 ↗
18. A. Prakash, D. Bahadur, The role of ionic electrolytes on capacitive performance of ZnO-reduced graphene oxide nanohybrids with thermally tunable morphologies. ACS Appl. Mater. Interfaces 6, 1394–1405 (2014)10.1021/am405031y ↗
19. J.S. Lee, K.H. You, C.B. Park, Low bandgap TiO2 nanoparticles wrapped by graphene. Adv. Mater. 24, 1084–1088 (2012)10.1002/adma.201104110 ↗
20. J. Gurusamy, S.K.J. Pradhan, P. Magudapathy, B. Panigrahi, Facile synthesis and enhanced luminescence behavior of ZnO:reduced graphene oxide (rGO) hybrid nanostructures. J. Luminesc. 203, 1–6 (2018)10.1016/j.jlumin.2018.06.023 ↗
21. H. Liu, Q. Sun, J. Xing, Z. Zheng, Z. Zhang, Z. Lü, K. Zhao, Fast and enhanced broadband photoresponse of a ZnO nanowire array/reduced graphene oxide film hybrid photodetector from the visible to the near-infrared range. ACS Appl. Mater. Interfaces 7, 6645–6651 (2015)10.1021/am509084r ↗
22. B. Chitara, L.S. Panchakarla, S.B. Krupanidhi, C.N.R. Rao, Infrared photodetectors based on reduced graphene oxide and graphene nanoribbons. Adv. Mater. 23, 5419–5424 (2011)10.1002/adma.201101414 ↗
23. D. Shao, M. Yu, H. Sun, T. Hu, J. Lian, S. Sawyer, High responsivity, fast ultraviolet photodetector fabricated from ZnO nanoparticle–graphene core–shell structures. Nanoscale 5, 3664–3667 (2013)10.1039/c3nr00369h ↗
24. B. Nie, J.G. Hu, L.B. Luo, C. Xie, L.H. Zeng, P. Lv, F.Z. Li, J.S. Jie, M. Feng, C.Y. Wu, Y.Q. Yu, S.H. Yu, Monolayer graphene film on ZnO nanorod array for high-performance Schottky junction ultraviolet photodetectors. Small 9, 2872–2879 (2013)10.1002/smll.201203188 ↗
25. X.W. Fu, Z.M. Liao, Y.B. Zhou, H.C. Wu, Y.Q. Bie, J. Xu, D.P. Yu, Graphene/ZnO nanowire/graphene vertical structure based fast-response ultraviolet photodetector. Appl. Phys. Lett. 100, 223114–223117 (2012)10.1063/1.4724208 ↗
26. K. Joondong, Y. Ju-Hyung, K.C. Hyun, P.Y. Chang, W. Ju Yeon, P. Jeunghee, L. Jung-Ho, Y. Junsin, H. Chang-Soo, ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect. Nanotechnology 21, 115205–115209 (2010)10.1088/0957-4484/21/11/115205 ↗
27. B. Kang, S. Lim, W.H. Lee, S.B. Jo, K. Cho, Work-Function-Tuned Reduced Graphene Oxide via Direct Surface Functionalization as Source/Drain Electrodes in Bottom-Contact Organic Transistors. Adv. Mater. 25, 5856–5862 (2013)10.1002/adma.201302358 ↗
28. Ü. Özgür, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Doğan, V. Avrutin, S.J. Cho, H. Morkoç, A comprehensive review of ZnO materials and devices. J. Appl. Phys. 98, 041301–042103 (2005)10.1063/1.1992666 ↗
29. R. Ghosh, M. Dutta, D. Basak, Self-seeded growth and ultraviolet photoresponse properties of ZnO nanowire arrays. Appl. Phys. Lett. 91, 073108–073111 (2007)10.1063/1.2771533 ↗
30. W. Dai, Q. Yang, F. Gu, L. Tong, ZnO subwavelength wires for fast-response mid-infrared detection. Opt. Express. 17, 21808–21812 (2009)10.1364/OE.17.021808 ↗
31. G. Memisoglu, C. Varlikli, Highly efficient organic UV photodetectors based on polyfluorene and naphthalenediimide blends: effect of thermal annealing. Int. J. Photoenergy 2012, 1–11 (2012)10.1155/2012/936075 ↗
32. Y. Sun, X. Yan, X. Zheng, Y. Liu, Y. Zhao, Y. Shen, Q. Liao, Y. Zhang, High on–off ratio improvement of ZnO-based forming-free memristor by surface hydrogen annealing. ACS Appl. Mater. Interfaces 7, 7382–7388 (2015)10.1021/acsami.5b01080 ↗
33. H. Lee, N. An, S. Jeong, S. Kang, S. Kwon, J. Lee, Y. Lee, D.Y. Kim, S. Lee, Strong dependence of photocurrent on illumination-light colors for ZnO/graphene Schottky diode. Curr. Appl. Phys. 17, 552–556 (2017)10.1016/j.cap.2017.02.001 ↗
34. M.K. Kavitha, P. Gopinath, H. John, Reduced graphene oxide–ZnO self-assembled films: tailoring the visible light photoconductivity by the intrinsic defect states in ZnO. Phys. Chem. Chem. Phys. 17, 14647–14655 (2015)10.1039/C5CP01318F ↗
35. E. Rokhsata, O. Akhavanb, Improving the photocatalytic activity of graphene oxide/ZnO nanorodfilms by UV irradiation. Appl. Surf. Sci. 371, 590–595 (2016)10.1016/j.apsusc.2016.02.222 ↗
36. O. Akhavan, Graphene nanomesh by ZnO nanorod photocatalysts. ACS Nano 4, 4174–4180 (2010)10.1021/nn1007429 ↗
37. R. Waser, R. Dittmann, G. Staikov, K. Szot, Redox-based resistive switching memories—nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632–3663 (2009)10.1002/adma.200900375 ↗
38. T.M. Pan, C.H. Lu, Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature. Appl. Phys. Lett. 99, 113509 (2011)10.1063/1.3638490 ↗
39. C. Li Lin, W. Yi Chang, Y.L. Huang, P.C. Juan, T.W. Wang, K. Yu Hung, C. Yu Hsieh, T.K. Kang, J.B. Shi, Resistance switching behavior of ZnO resistive random access memory with a reduced graphene oxide capping layer. Jpn. J. Appl. Phys. 54, 04DJ08-6 (2015)
40. G.C. Cardarilli, G.M. Khanal, L. Di Nunzio, M. Re, R. Fazzolari, R. Kumar, Memristive and memory impedance behavior in a photo-annealed ZnO–rGO thin-film device. Electronics 9, 287–300 (2020)10.3390/electronics9020287 ↗