Capacitance calculation for electrostatic transducer applications
Source abstract
Abstract
An approach for accurate calculation of the capacitance coefficient matrix in electrostatic transducer applications is presented in this article. We consider transducers consisting of a fixed and a moving set of metal strips where strong fringing field effects may occur. The calculation method is based on an expansion of the surface charge distribution on each metal finger in terms of orthogonal functions that capture the singularity effects at the edge of the fingers. We analyze the errors both due to neglect of end effects and due to truncation of the series expansion. The complexity of the capacitance matrix calculation is significantly reduced by truncation to the first three terms of the expansion, giving errors below 1%. An example capacitance structure is analyzed in detail. The capacitance/induction coefficients roughly vary as a cosine function of the horizontal relative displacement between two electrodes. This motivates a simple approximation formula that can be used to calculate the capacitance coefficient matrix of electrostatic transducers. It gives a maximum error of 1.5% compared to the full calculation for a gap g = 5 µm and a microstrip width a = 50 µm in the example structure.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Innovative Energy Harvesting Technologies · Acoustic Wave Resonator Technologies · Advanced MEMS and NEMS Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Micro and Nano Systems Technology, Vestfold University College, Tønsberg, Norway
References (32)
Show source-provided references
1. Abramowitz M · 1972
2. 10.1109/TED.2004.84271310.1109/TED.2004.842713 ↗
3. 10.1088/0960-1317/19/11/11502510.1088/0960-1317/19/11/115025 ↗
4. 10.1088/0957-0233/17/12/R0110.1088/0957-0233/17/12/R01 ↗
5. 10.1088/0964-1726/19/7/07501510.1088/0964-1726/19/7/075015 ↗
6. 10.1109/22.80897210.1109/22.808972 ↗
7. 10.1109/TMTT.1975.112870410.1109/TMTT.1975.1128704 ↗
8. Gradshteyn IS · 2007
9. 10.1109/SENSOR.2009.528582910.1109/SENSOR.2009.5285829 ↗
10. Hamate Y · 2011 · 327
11. 10.1143/JJAP.45.442310.1143/JJAP.45.4423 ↗
12. 10.7567/JJAPS.30S1.16210.7567/JJAPS.30S1.162 ↗
13. Kashiwagi K · 2010 · 169
14. Kovacs GTA · 1998
15. Le CP · 2009 · 336
16. Le CP · 2009 · 286
17. Le CP · 2010 · 323
18. Mahmould MA · 2006 · 223
19. Matsumoto K · 2011 · 134
20. 10.1109/22.15660110.1109/22.156601 ↗
21. 10.1177/00202940080410040410.1177/002029400804100404 ↗
22. 10.1109/JPROC.2008.92749410.1109/JPROC.2008.927494 ↗
23. 10.1088/0960-1317/16/9/S0310.1088/0960-1317/16/9/S03 ↗
24. 10.1109/TIM.2004.82706510.1109/TIM.2004.827065 ↗
25. Press WH · 2007
26. 10.1109/TMTT.1979.112957610.1109/TMTT.1979.1129576 ↗
27. 10.1109/16.81758910.1109/16.817589 ↗
28. 10.1109/SENSOR.2007.430008810.1109/SENSOR.2007.4300088 ↗
29. Suzuki Y · 2010 · 47
30. Tsutsumino T · 2006 · 279
31. 10.1109/MEMSYS.2006.162774510.1109/MEMSYS.2006.1627745 ↗
32. Yamashita K · 2010 · 165