journal article·2026Open access

Effects of Pressure and Rotation Speed on the Growth Rate and Uniformity of SiC in a Vertical Hot-wall CVD Epitaxial System

Xiaolei LI, Xiaofang QI, Wencheng MA, Yongkuan XU

Abstract

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Research context

OpenAlex topics: Silicon Carbide Semiconductor Technologies · HVDC Systems and Fault Protection · Copper Interconnects and Reliability

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