Effects of Working Pressure on the Structure and Electrical Properties of AlScN Thin Films
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Acoustic Wave Resonator Technologies · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (19)
Show source-provided references
1. KIM K H, KARPOV I, OLSSON R H, et al . Wurtzite and fluorite ferroelectric materials for electronic memory. Nature Nanotechnology , 2023, 18(5): 422.10.1038/s41565-023-01361-y ↗
2. ZHANG Y L, ZHU Q X, TIAN B B, et al . New-generation ferroelectric alscn materials. Nano-Micro Letters , 2024, 16(1): 31.10.1007/s40820-024-01441-1 ↗
3. IHLEFELD J F, HARRIS D T, KEECH R, et al . Scaling effects in perovskite ferroelectrics: fundamental limits and process- structure-property relations. Journal of the American Ceramic Society , 2016, 99(8): 2537.10.1111/jace.14387 ↗
4. KIM Y S, KIM D H, KIM J D, et al . Critical thickness of ultrathin ferroelectric BaTiO 3 films. Applied Physics Letters , 2005, 86(10): 3.10.1063/1.1880443 ↗
5. MIKOLAJICK T, SLESAZECK S, MULAOSMANOVIC H, et al . Next generation ferroelectric materials for semiconductor process integration and their applications. Journal of Applied Physics , 2021, 129(10): 21.10.1063/5.0037617 ↗
6. FICHTNER S, WOLFF N, LOFINK F, et al . AlScN: a III-V semiconductor based ferroelectric. Journal of Applied Physics , 2019, 125(11): 114103.10.1063/1.5084945 ↗
7. HAYDEN J, HOSSAIN M D, XIONG Y H, et al . Ferroelectricity in boron-substituted aluminum nitride thin films. Physical Review Materials , 2021, 5(4): 044412.10.1103/PhysRevMaterials.5.044412 ↗
8. ISLAM M R, WOLFF N, YASSINE M, et al . On the exceptional temperature stability of ferroelectric Al 1- x Sc x N thin films. Applied Physics Letters , 2021, 118(23): 232905.10.1063/5.0053649 ↗
9. SCHÖNWEGER G, ISLAM M R, WOLFF N, et al . Ultrathin Al 1- x Sc x N for low-voltage-driven ferroelectric-based devices. Physica Status Solidi-Rapid Research Letters , 2023, 17(1): 6.10.1002/pssr.202200312 ↗
10. RYOO S K, KIM K D, CHOI W, et al . Fabrication of ultrathin ferroelectric Al 0.7 Sc 0.3 N films under complementary-metal-oxide- semiconductor compatible conditions by using HfN 0.4 electrode. Advanced Materials , 2025, 37(1): 2413295.10.1002/adma.202413295 ↗
11. YASUOKA S, SHIMIZU T, TATEYAMA A, et al . Impact of deposition temperature on crystal structure and ferroelectric properties of (Al 1- x Sc x )N films prepared by sputtering method. Physica Status Solidi A-Applications and Materials Science , 2021, 218(17): 2100302.10.1002/pssa.202170049 ↗
12. FICHTNER S, REIMER T, CHEMNITZ S, et al . Stress controlled pulsed direct current co-sputtered Al 1- x Sc x N as piezoelectric phase for micromechanical sensor applications. APL Materials , 2015, 3(11): 6.10.1063/1.4934756 ↗
13. YASUOKA S, SHIMIZU T, TATEYAMA A, et al . Effects of deposition conditions on the ferroelectric properties of (Al 1- x Sc x )N thin films. Journal of Appllied Physics , 2020, 128(11): 114103.10.1063/5.0015281 ↗
14. HASEMAN M S, NOESGES B A, SHIELDS S, et al . Cathodoluminescence and X-ray photoelectron spectroscopy of ScN: dopant, defects, and band structure. APL Materials , 2020, 8(8): 7.10.1063/5.0019533 ↗
15. ZHANG S Y, HOLEC D, FU W Y, et al . Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides. Journal of Applied Physics , 2013, 114(13): 11.10.1063/1.4824179 ↗
16. ABADIAS G, LEROY W P, MAHIEU S, et al . Influence of particle and energy flux on stress and texture development in magnetron sputtered TiN films. Journal of Physics D-Applied Physics , 2013, 46(5): 9.10.1088/0022-3727/46/5/055301 ↗
17. SANDU C S, PARSAPOUR F, MERTIN S, et al . Abnormal grain growth in AlScN thin films induced by complexion formation at crystallite interfaces. Physica Status Solidi A-Applications and Materials Science , 2019, 216(2): 11.10.1002/pssa.201800569 ↗
18. GREMMEL M, FICHTNER S. The interplay between imprint, wake-up, and domains in ferroelectric Al 0.70 Sc 0.30 N. Journal of Applied Physics , 2024, 135(20): 204101.10.1063/5.0197111 ↗
19. DOHERTY T A S, WINCHESTER A J, MACPHERSON S, et al . Performance-limiting nanoscale trap clusters at grain junctions in halide perovskites. Nature , 2020, 580(7803): 360.10.1038/s41586-020-2184-1 ↗