Interface Layer of Te-based Thermoelectric Device: Abnormal Growth and Interface Stability
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Innovation Diffusion and Forecasting
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (43)
Show source-provided references
1. WEI J, YANG L, MA Z, et al. Review of current high-ZT thermoelectric materials. Journal of Materials Science, 2020, 55(27): 12642.10.1007/s10853-020-04949-0 ↗
2. LIU H T, SUN Q, ZHONG Y, et al. Enhanced thermoelectric performance of n-type Nb-doped PbTe by compensating resonant level and inducing atomic disorder. Materials Today Physics, 2022, 24: 100677.10.1016/j.mtphys.2022.100677 ↗
3. SU L, WANG D, WANG S, et al. High thermoelectric performance realized through manipulating layered phonon-electron decoupling. Science, 2022, 375(6587): 1385.10.1126/science.abn8997 ↗
4. SUN J, WANG R, CUI W, et al. Percolation process-mediated rich defects in hole-doped PbSe with enhanced thermoelectric performance. Chemistry of Materials, 2022, 34(14): 6450.10.1021/acs.chemmater.2c01142 ↗
5. AN D, WANG J, ZHANG J, et al. Retarding Ostwald ripening through Gibbs adsorption and interfacial complexions leads to high-performance SnTe thermoelectrics. Energy & Environmental Science, 2021, 14(10): 5469.10.1039/D1EE01977E ↗
6. YANG J, LI G, ZHU H, et al. Next-generation thermoelectric cooling modules based on high-performance Mg3(Bi,Sb)2 material. Joule, 2022, 6(1): 193.10.1016/j.joule.2021.11.008 ↗
7. CHU J, HUANG J, LIU R, et al. Electrode interface optimization advances conversion efficiency and stability of thermoelectric devices. Nature Communications, 2020, 11(1): 2723.10.1038/s41467-020-16508-x ↗
8. BJØRK R. The universal influence of contact resistance on the efficiency of a thermoelectric generator. Journal of Electronic Materials, 2015, 44(8): 2869.10.1007/s11664-015-3731-7 ↗
9. ZHANG Q H, BAI S Q, CHEN L D. Technologies and applications of thermoelectric devices: current status, challenges and prospects. Journal of Inorganic Materials, 2019, 34(3): 279.10.15541/jim20180465 ↗
10. WU X, HAN Z, ZHU Y, et al. A general design strategy for thermoelectric interface materials in n-type Mg3Sb1.5Bi0.5 single leg used in TEGs. Acta Materialia, 2022, 226: 117616.10.1016/j.actamat.2021.117616 ↗
11. HU X K, ZHANG S M, ZHAO F, et al. Thermoelectric device: contact interface and interface materials. Journal of Inorganic Materials, 2019, 34(3): 269.10.15541/jim20180248 ↗
12. SAKANO M, HIRAYAMA M, TAKAHASHI T, et al. Radial spin texture in elemental tellurium with chiral crystal structure. Physical Review Letters, 2020, 124(13): 136404.10.1103/PhysRevLett.124.136404 ↗
13. REITZ J R. Electronic band structure of selenium and tellurium. Physical Review, 1957, 105(4): 1233.10.1103/PhysRev.105.1233 ↗
14. 李蓉, 陈少平, 樊文浩, 等. 孤对电子对碲热电传输性能的影响. 材料导报, 2018, 32(21): 3726.
15. LIN S Q, LI W, ZHANG X Y, et al. Sb induces both doping and precipitation for improving the thermoelectric performance of elemental Te. Inorganic Chemistry Frontiers, 2017, 4(6): 1066.10.1039/C7QI00138J ↗
16. RAO F, DING K, ZHOU Y, et al. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing. Science, 2017, 358(6369): 1423.10.1126/science.aao3212 ↗
17. GUO J, FAN W, WANG Y, et al. Study on improving comprehensive property of Te-based thermoelectric joint. Journal of Alloys and Compounds, 2021, 886: 161242.10.1016/j.jallcom.2021.161242 ↗
18. 郭敬云, 陈少平, 樊文浩, 等. 改善Te基热电材料与复合电极界面性能. 物理学报, 2020, 69(14): 179.
19. HE Z, CHANG L G, LIN Y, et al. Real-time visualization of solid-phase ion migration kinetics on nanowire monolayer. Journal of the American Chemical Society, 2020, 142(17): 7968.10.1021/jacs.0c02137 ↗
20. TASHIRO M, SUKENAGA S, IKEMOTO K, et al. Interfacial reactions between pure Cu, Ni, and Ni-Cu alloys and p-type Bi2Te3 bulk thermoelectric material. Journal of Materials Science, 2021, 56(29): 16545.10.1007/s10853-021-06358-3 ↗
21. FERRERES X R, AMINORROAYA YAMINI S, NANCARROW M, et al. One-step bonding of Ni electrode to n-type PbTe—a step towards fabrication of thermoelectric generators. Materials & Design, 2016, 107: 90.10.1016/j.matdes.2016.06.038 ↗
22. ZHANG J, WEI P, ZHANG H, et al. Enhanced contact performance and thermal tolerance of Ni/Bi2Te3 joints for Bi2Te3-based thermoelectric devices. ACS Applied Materials & Interfaces, 2023, 15(18): 22705.10.1021/acsami.3c01904 ↗
23. CHEN J, FAN W, WANG Y, et al. Improvement of stability in a Mg2Si-based thermoelectric single-leg device via Mg50Si15Ni50 barrier. Journal of Alloys and Compounds, 2022, 926: 166888.10.1016/j.jallcom.2022.166888 ↗
24. WANG Y, CHEN J, JIANG Y, et al. Suppression of interfacial diffusion in Mg3Sb2 thermoelectric materials through an Mg4.3Sb3Ni/Mg3.2Sb2Y0.05/Mg4.3Sb3Ni-graded structure. ACS Applied Materials & Interfaces, 2022, 14(29): 33419.10.1021/acsami.2c09477 ↗
25. CHEN S, CHEN J, FAN W, et al. Improvement of contact and bonding performance of Mg2Si/Mg2SiNi3 thermoelectric joints by optimizing the concentration gradient of Mg. Journal of Electronic Materials, 2022, 51(5): 2256.10.1007/s11664-022-09477-y ↗
26. SUN Y, YIN L, ZHANG Z, et al. Low contact resistivity and excellent thermal stability of p-type YbMg0.8Zn1.2Sb2/Fe-Sb junction for thermoelectric applications. Acta Materialia, 2022, 235: 118066.10.1016/j.actamat.2022.118066 ↗
27. SUN Z, CHEN X, ZHANG J, et al. Achieving reliable CoSb3 based thermoelectric joints with low contact resistivity using a high-entropy alloy diffusion barrier layer. Journal of Materiomics, 2022, 8(4): 882.10.1016/j.jmat.2021.12.010 ↗
28. ARVHULT C M, GUÉNEAU C, GOSSÉ S, et al. Thermodynamic assessment of the Ni-Te system. Journal of Materials Science, 2019, 54(16): 11304.10.1007/s10853-019-03689-0 ↗
29. LIAO C N, LEE C H, CHEN W J. Effect of interfacial compound formation on contact resistivity of soldered junctions between bismuth telluride-based thermoelements and copper. Electrochemical and Solid-State Letters, 2007, 10(9): 23.10.1149/1.2749330 ↗
30. XIA H, CHEN C L, DRYMIOTIS F, et al. Interfacial reaction between Nb foil and n-type PbTe thermoelectric materials during thermoelectric contact fabrication. Journal of Electronic Materials, 2014, 43(11): 4064.10.1007/s11664-014-3350-8 ↗
31. LI C C, DRYMIOTIS F, LIAO L L, et al. Interfacial reactions between PbTe-based thermoelectric materials and Cu and Ag bonding materials. Journal of Materials Chemistry C, 2015, 3(40): 10590.10.1039/C5TC01662B ↗
32. WANG X, GU M, LIAO J C, et al. High temperature interfacial stability of Fe/Bi0.5Sb1.5Te3 thermoelectric elements. Journal of Inorganic Materials, 2021, 36(2): 197.10.15541/jim20200126 ↗
33. TSUTOMU K, HIROMASA T, SATO H K, et al. Enhancement of average thermoelectric figure of merit by increasing the grain-size of Mg3.2Sb1.5Bi0.49Te0.01. Applied Physics Letters, 2018, 112(3): 33903.10.1063/1.5016488 ↗
34. AN D, CHEN S, LU Z, et al. Low thermal conductivity and optimized thermoelectric properties of p-type Te-Sb2Se3: synergistic effect of doping and defect engineering. ACS Applied Materials & Interfaces, 2019, 11(31): 27788.10.1021/acsami.9b07313 ↗
35. NORÉN L, TING V, WITHERS R L, et al. An electron and X-ray diffraction investigation of Ni1+xTe2 and Ni1+xSe2CdI2/NiAs type solid solution phases. Journal of Solid State Chemistry, 2001, 161(2): 266.10.1006/jssc.2001.9309 ↗
36. ANDERSON J S. Nonstoichiometric compounds: a critique of current structural views. Proceedings of the Indian Academy of Sciences - Chemical Sciences, 1984, 93(6): 861.10.1007/BF02840335 ↗
37. CHEN J, ZHANG Y, YU Z, et al. Interface growth and void formation in Sn/Cu and Sn0.7Cu/Cu systems. Applied Sciences, 2018, 8(12): 2703.10.3390/app8122703 ↗
38. LIN Y, WU X, LI Y, et al. Revealing multi-stage growth mechanism of Kirkendall voids at electrode interfaces of Bi2Te3-based thermoelectric devices with in-situ TEM technique. Nano Energy, 2022, 102: 107736.10.1016/j.nanoen.2022.107736 ↗
39. LIU R, XING Y, LIAO J, et al. Thermal-inert and ohmic-contact interface for high performance half-Heusler based thermoelectric generator. Nature Communications, 2022, 13(1): 7738.10.1038/s41467-022-35290-6 ↗
40. BALL R G J, DICKINSON S, CORDFUNKE E H P, et al. Thermochemical data acquisition. Part II. Luxembourg: Commission of the European Communities, 1992: 106.
41. BARIN I. Thermochemical data of pure substances. 3rd ed. Weinheim: VCH Verlagsgesellschaft mbH, 1995: 1198.10.1002/9783527619825 ↗
42. 叶贡欣. 扩散控制固相反应动力学关系的研究. 合肥水泥研究设计院院刊, 1992(1): 10.
43. 陈立东, 刘睿恒, 史迅. 热电材料与器件. 北京: 科学出版社, 2018: 1.