Epitaxy Single Crystal GaN on AlN Prepared by Plasma-enhanced Atomic Layer Deposition
Source abstract
Abstract
面蓝宝石衬底上使用原子层沉积(Plasma-Enhanced Atomic Layer Deposition, PEALD)方法制备 AlN 成核层来外延 GaN。相比于磁控溅射方法，PEALD 方法制备 AlN 的晶体质量更 好；相比于分子束外延方法，PEALD 方法的工艺简单，成本低以及产量大。沉积 AlN 测试结果表明，AlN 沉积速 率为 0.1 nm/cycle；AlN 薄膜具有随其厚度变化而变化的岛状形貌。外延 GaN 测试结果表明，当沉积厚度为 20.8 nm 的 AlN 时，GaN 外延层有最平整的表面，均方根粗糙度为 0.272 nm，同时具有最好的光学特性
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (32)
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