Temperature Dependent Transient Photoconductive Response of CsPbBr3 NCs
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Abstract
樊家顺 1 , 夏冬林 2 , 刘保顺 2 (武汉理工大学 1. 材料科学与工程学院; 2. 硅酸盐建筑材料国家重点实验室, 武汉 430070) 摘 要: 近年来, 全无机铯铅卤化钙钛矿 CsPbX 3 (X=Cl, Br, I)纳米晶(NCs)材料因具有长载流子寿命、强光吸收、低 成本制造和带隙可调性等独特的性能已成为研究的热点, 但专注于 CsPbBr 3 纳米晶瞬态光电导的相关研究却很少。 本工作通过配体辅助再沉淀法制备了 CsPbBr 3 纳米晶体, 并改进了光电导薄膜样品的制样方法和真空瞬态光电导 测试装置, 研究了不同温度和不同激发功率对 CsPbBr 3 纳米晶瞬态光电导的影响。 不同温度的瞬态光电导实验结果 表明, 在 133~273 K 温度范围内, 光生电流衰减速率随着温度增加而逐渐减小, 而在 273~373 K 温度范围内, 光生 电流衰减速率随着温度升高而逐渐增大。不同激发功率的瞬态光电导实验表明, 激发功率从 200 mW 逐渐增大到 1000 mW 时, 光生电流衰减速率增大。本工作的研究方法为研究光激发光生载流子的动力学相关行为提供了一个
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OpenAlex topics: Perovskite Materials and Applications · Solid-state spectroscopy and crystallography · Optical properties and cooling technologies in crystalline materials
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References (40)
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