Influence of Growth Temperature and Oxygen Pressure on Laser-induced Voltage Effect of La_(0.67)Sr_(0.33)MnO_3:Ag_(0.08) Thin Films

La0.67Sr0.33MnO3:Ag0.08(LSMO:Ag0.08) polycrystalline ceramics were prepared by chemical co-precipitation method,and then La0.67Sr0.33MnO3:Ag0.08 thin films were prepared on vicinal cut LaAlO3(LAO) substrates by pulsed laser deposition(PLD) technique.Effects of growth temperature and oxygen pressure on structure,electrical transport properties and laser-induced voltage(LIV) effect were investigated.The results show that the maximum LIV peak(Up),the figure of merit(Fm) and anisotropy Seebeck coefficient(△S) are obtained for LSMO:Ag0.08 thin films when growth temperature and oxygen pressure are 790 and 45℃ Pa,respectively.The LIV enhancement of LSMO:Ag0.08 thin films is due to the anisotropy of the Seebeck coefficient,which is produced by long range cooperative Jahn-Teller distortions under optimal growth temperature and oxygen pressure conditions.