Optical Properties of a-GaN Film Deposited by DC Magnetron Sputtering
Source abstract
Abstract
GaN thin films were prepared by direct current(DC)planar magnetron sputtering on Si and SiO_2.The films were characterized by X-ray diffraction(XRD),Raman,Fourier Transform Infrared Spectroscopy(FTIR),photoluminescence(PL)and UV-Vis spectra.XRD and Raman spectrum show that the films are amorphous.Fourier infrared absorbance spectrum shows that the main absorbance is Ga-N stretching vibration.360nm ultraviolet emission is obtained at room temperature.UV-Vis result shows that the optical band gap of the films is 3.74eV,which is consistent with photoluminescence spectrum result.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials
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