Effect of Substrate Bias on Crystallization Temperature and Dielectric Properties of Sputtered Ta_2O_5 Films

At the substrate temperature of 620℃, crystalline TaO_5 films were sputtered by introducing suitable negative substrate bias of 100～200V. It was thought that the ion bombard- ment. to the substrate was enhanced with introducing the negative substrate bias. The diffusion and looseness of deposited particles on the surface of substrate were accelerated. Consequently, the crystallization of Ta_2O_5 films was improved and the crystallization temperature was lowered. Meanwhile, the C-V result indicated that the dielectric properties of Ta_2O_5 films were further improved by introducing negative Substrate bias.