article·2009-01-01

Growth of α-Al_2O_3:C Crystal by Edge-Defined,Film-Fed Growth Technique

Yang Xin

Abstract

α-Al2O3:C crystal was grown by Edge-Defined,Film-Fed Growth Technique(EFG) in which graphite heating unit and shield acted as the carbon source and high purity Al2O3 was used as the raw material.Thermoluminescence(TL) and optically stimulated luminescence(OSL) properties of as-grown crystal after annealing in H2 were investigated.The crystal shows a single one-order kinetic glow peak at 460K and blue emission band at 415nm.OSL decay curve of α-Al2O3∶ C crystal shows exponential characteristic.The decay curve is made up of two components,i.e.the faster component and the slower component.The TL and OSL responses of α-Al2O3∶ C crystal show linear-sublinear-saturation characteristics.The TL exhibits good linear dose response in the dose range from 5×10-6 to 0.2Gy and saturation is about 10Gy.The OSL exhibits good linear dose response in the dose range from 5×10-6 to 10Gy and saturation is about 30Gy.
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Research context

OpenAlex topics: Luminescence Properties of Advanced Materials · Ga2O3 and related materials · GaN-based semiconductor devices and materials

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