Effect of Annealing Treatments on Scintillation Properties of Lu_2Si_2O_7∶Ce Grown by Czochralski Method

Although the Lu2Si2O7∶Ce(LPS∶Ce) has a high light yield about 26000ph/MeV,the LPS∶Ce crystals grown by Czochralski(Cz) process usually display a low light yield.In present work,annealing treatments in different conditions were carried out on Cz grown LPS∶Ce with low luminescence efficiency,in order to investigate the effect of annealing treatment conditions on scintillation properties of LPS∶Ce,such as luminescence efficiency,absorption spectrum.It is found that annealing in argon atmosphere has a negligible effect on the scintillation properties of LPS∶Ce;annealing in air can dramatically improve the luminescence efficiency of LPS∶Ce.The optimized annealing mechanism is determined through the comparison between different annealing treatment:atmosphere of air;annealing temperature of 1400℃;annealing time depending on the dimension of the sample.The larger dimension is the longer annealing time.The change trend of charge transfer band in the absorption spectrum and UV-ray excitation and emission property of LPS∶Ce crystal are also discussed.