Sinterability, Microstructure and Microwave Dielectric Properties ofBa(Mg_(1/3) Ta_[(2/3)(1+x)] O_3

Sintering behavior, microstructure and microwave dielectric properties of the nonstoichiometric Ba(Mg1/3Ta2/3(1+x)O3 with 0.0≤ x≤ 0.01 were investigated. The sintered density wasimproved by increasing Ta concentration. The ordering parameter S was not only related to thepresence of defect in the specimen but also sensitive to the type of defects. The presence of B-sitevacancy might hinder the ordering procedure much more significantly than that of A-site vacancy.The Q' f value decreased and the dielectric constant increased with the increase of tantalumcontents.