Effect of Sintering Process on Dielectric Properties of B_2O_3-doped Ba_(1-x)Sr_xTiO_3 Graded Ceramics

Effect of sintering temperature and heating rate on densification, grain size and dielectric properties of B2O3-doped Ba1-xSrxTiO3(x = 0 -0.4, in step of 0.02) graded ceramics was investigated. With the increase of sintering temperature, B2O3 volatilization and densification improvement resulted in Curie peak elevated and sharpened. With the increasing of dopant content, grains grew up uniformly, and dielectric constant and loss increased. While dopant volatilization, densification process and grain growth were fulfilled synchronously with appropriate heating rate, which conduces to the dielectric improvement and dielectric loss reduction for the graded ceramics. In addition, B2O3 doping lowered at least 150℃ of the sintering temperature, and the dielectric loss was reduced obviously; Curie peak was broadened and flattened remarkably and the temperature coefficient of permittivity was decreased greatly, which means the accuracy and stability of components with such material can be improved.