Al_2O_3 Films Deposited by Plasma Source Enhanced Magnetron Sputtering

The aluminium oxide films were deposited on Si(100) substrate by plasma source enhanced magnetron sputtering by using an electron cyclotron resonance (ECR) microwave plasma source and a direct current magnetron sputtering target. X-ray photoelectron spectroscopy (XPS) and glancing angle X-ray diffraction patterns show that the metastable stoichiometric γ-Al2 O3 films can be obtained at a higher deposition temperature of 600℃. The refractive index of the films is 1.7, corresponding with that of stable α-Al2O3.