Kinetics of Chemically Activated Combustion Synthesis α-Si_3N4 under Controlled Temperature

Combustion synthesis of α-Si3N4 was carried out through a chemical activation method under controlled temperature. Temperature profile analysis was carried out to determine the kinetics of combustion synthesis of α-Si3N4. The kinetic parameters included the combustion wave velocity, the rate of temperature increase, the adiabatic temperature rise, the inert temperature rise time and the inert temperature decay time, as well as the convention ratio of Si to Si3N4. Two methods, i. e., temperature profile analysis method and wave velocity method were used to calculate the activation energy of combustion reaction of silicon in pressurized nitrogen. The kinetics analysis will provide guideline for understanding the reaction mechanism and optimizing the processing parameters.