Temperature Dependence of β-SiC Thin Films Epitaxial Grown on Si Substrates

β-SiC thin films were heteroepitaxially grown on (100)Si substrates at a temperaturerange from 1000 to 1400℃ by atmospheric pressure chemical vapor deposition (APCVD) process.Experimental results show that the epitaxial layers change from polycrystalline silicon into singlecrystal β-SiC state with the deposition temperature's increasing, but the growth rates of singlecrystal films decrease inversely.