Oxidation Resistance of C-SiC-TiC-TiB_2 Composite

Oxidation resistance of C-SiC-TiC-TiBZ composite prepared by in-situ synthesis was conducted from 600 to 1200℃ in air. Both weight gain and loss occurred by the difference of composition and testing temperature. The weight change essentially depends on the rate of oxidationof carbon and ceramics ajnd the characteristics of oxidized surfaCe. The composite was hardlyoxidized at 600℃. TiB2 was first oxidized and BZO3 liquid formed at 800C. BZO3 and SiOZ trendto form a borosilicate glass above 1000℃, which lead to a formation of dense oxide surface. Therate of Okidation was obviously decreased by the appearance of liquid phase ajnd the formation ofdense oxide surface during oxidation. This makes the oxidation mechanism of the composite intoblunting oxidation, resulting in the increase of oxidation resistance.