Preparation and Characteristic of ZnO Thin Film Grown on 6H-SiC Single Crystal Substrate

ZnO thin film was prepared on the 6H-SiC single crystal substrate by pulsed laser deposition (PLD) method.X-ray diffraction(XRD),reflection high energy electron diffraction(RHEED) andΦscan of grazing incidence X-ray diffraction with synchrotron radiation (SRGID) were employed to investigate the structure properties of ZnO thin film.The results show that single crystal ZnO thin film is prepared on 6H-SiC single crystal substrate.The results of SRGID with different grazing incidence angles indicate that the crystal relaxation along the c-axis in ZnO thin film is not uniform.The crystal parameters of a-axis are 0.3264,0.3272 and 0.3223nm respectively,which correspond to the detected depth of the interface layers,the middle section and the surface layers of the ZnO film.The calculated results show that the Poisson ratio of ZnO thin film is 0.504 and the lattice mismatch ofα-axis between the ZnO thin film and 6H-SiC substrate is 5.84%.