Influence of Tiny ZnO on Luminescence Intensity of Zn_2SiO_4:Mn Films
Source abstract
Abstract
Magnesium-doped zinc silicate(Zn_2SiO_4:Mn)was prepared on oxidized silicon wafer by a simple sol-gel process.The crystallinity of films was characterized by X-ray diffraction and optical properties were measured by UV-Vis and photoluminescence spectra.The influence of annealing temperature on films properties was also studied systematically.It's found that proper ZnO can enhance the photoluminescence intensity of Zn_2SiO_4:Mn films.And the mechanism was explained by using the model of quantum confinement-luminescence center proposed by G.G.Qin.
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Research context
OpenAlex topics: Gas Sensing Nanomaterials and Sensors · ZnO doping and properties
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