article·2004-01-01

Fabrication of n-type Bismuth-Tellurium Nanowire Array Thermoelectric Materials by Electrodeposition Technology

Wei Zhang

Abstract

The electrodeposition process of bismuth-tellurium co-deposition was studied, and the effects of temperature and HNO3 concentration on the co-deposition process were also analyzed. Based on the work, n-type bismuth-tellurium nanowire array thermoelectric materials were fabricated through DC electrodeposition by using anodic alumina template with a pore diameter of 50nm as the cathode. The results show that electrodeposition potential has great effect on the compositon of bismuth-tellurium alloy.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · nanoparticles nucleation surface interactions

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