β-FeSi_2 Thin Film Prepared by Femtosecond Laser Ablation and Its Optical Characteristic

The even single phaseβ-FeSi2 thin films were prepared by femtosecond laser deposition on Si (100) and Si (111) wafers using a FeSi2 alloy target. X-ray diffraction, field scanning electron microscope (FSEM), energy dispersive X-ray microanalysis (EDX), Fourier-transform Raman infrared spectroscope (FTRIS) were used to characterize the structure, composition, and properties ofβ-FeSi2 films. The growth ofβ-FeSi2 depends on the orientation of Si substrates. The photoluminescence from the grown single phaseβ-FeSi2 thin film observed at room temperature (20℃) is at a wavelength of 1.53μm. Raman peaks ofβ-FeSi2 observed by an Raman microscope with 514.5nm argon laser are at 192.9cm-1, 243.9cm-1 and other positions.