Growth and Structure of CN films by RF-reactive Sputtering
Source abstract
Abstract
Carbon nitride thin films were deposited on Si (100) substrates using the RF-reastive sput-tering technigue. These films were characterized by transimssion electron microscopy, infrared spectroscopy, X-ray photoelectron spectra (XPS) and X-ray diffraction (XRS). It was found that the structure and morpho1ogy of the CN films varied with deposition parameters. Under optimum conditions, β-C3N4 phase was synthesized.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Metal and Thin Film Mechanics · ZnO doping and properties
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