Poisoning Phenomenon on the Surface of ITO Target During DC-Magnetron Sputtering Process
Source abstract
Abstract
The poisoning phenomenon on the surface of ITO target during DC-Magnetron sputtering process was investigated. XRD, EPMA and LECO oxygen analyzer were used to study the poisoning mechanism and the factors leading to poisoning were analyzed. The result shows that In2O3 is decomposed into In2O and O2. This reaction on the surface of ITO target is the reason causing the poisoning phenomenon.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nuclear Physics and Applications · Metal and Thin Film Mechanics · Ion-surface interactions and analysis
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