Low Temperature Sintering of Doped ZnO-V2O5 Varistors
Source abstract
Abstract
The low-temperature sintering characteristics and electrical properties of ZnO-V2O5 varistors were studied through adding oxides with low melting point, which were the lead zinc borate glass frit forming materials. The results show that the sintering temperature is significantly decreased to 800℃ with conventional electric furnace sintering and the nonlinear properties are obviously enhanced through adding B2O3 and PbO. When the sample with co-doped 6wt% (PbO+B2O3) sintered at 800℃ for 4h, its leakage current density JL=7.2×10-6A/cm2 and nonlinear coefficient α=22.5.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Transition Metal Oxide Nanomaterials
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