Reactive Sputtering NiCrO_x Thin Film Process and Its Optical Constants
Source abstract
Abstract
The influence of mass flow of reactive gas on the composition and optical constants of deposited NiCrOx thin films was investigated. The results obtained show that NiCr target exhibits a poisoning phenomenon as O2 flow rate increased to a certain value during the reactive sputtering process. It is possible to deposit near transparent, dielectric thin films as well as the non--transparent, absorbing thin films. The study of optical constants of the thin films deposited at different oxygen flow rate may be applied to the development of solar selective surface.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies
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