Effects of Substrate Temperature on Properties of Al+N Codoped p-type ZnO Films

The development of ZnO based devices suffered from one major disadvantage: the lack of good, reproducible, p-type material. In this paper, Al+N codoped p-type ZnO films were fabricated by DC reactive magnetron sputtering. X-ray diffraction, X-ray photoelectron spectroscopy, transmittance spectra and Hall-effect measurement were carried out to discuss the effects of substrate temperatures on the properties of codoped ZnO films and the possible reasons. The results show that the codoped ZnO films can be realized at the substrate temperature of 500℃ with a p-type conduction, carrier density of 2.52×1017cm-3 and resistivity of 28.3Ω·cm.