Characterization of Fluorine and Carbon-Doped Silicon Oxide Film Deposited by PECVD

Fluorine and carbon-doped silicon oxide films (SiCOF) were deposited from tetraox- ethylsilane (TEOS) and octafluorocyclobutane (C4F8) by plasma-enhanced chemical yapor deposi- tion (PECVD). The study of X-ray photoelectron spectrum (XPS) and Fourier transform infrared spectrum (FTIR) of the film reveals that there are Si-F, Si-O, C-F, C-CFx, CF2, etc., configurations co-existing in the film. The refractive index of the as-deposited film is about 1.40. The refractive index of the film was measured as a function of the time of exposure to the atmosphere and an- nealing temperatures, and the mechanism of the change in the refractive index was discussed. The results show that an ideal deposition temperature is about 300°C.