Epitaxial Growth and Phase Transition Properties of Vanadium DioxideThin Film on Sapphire Substrate

Vanadium Dioxide(VO2) thin films deposited on(1120) sapphire substrates by pulsed laser ablation were characterized by using the techniques of XRD , XRD pole figure, RBS/channeling andelectrical measurements The results show that VO2 thin film on the (1120) sapphire grows pi-taxially with out of -plane:(100)VO2/ /(1120)sapphire and in-plane:VO2[010]/ /sapphire[0001].Channeling cannot be found in RBS/Channeling analysis ,indicating that the film fails to singlecrystalline growth .The further analysis of the crystallography of the (100)VO2 reveals that within 5 lattice periods,no other lattice vector exists in the (100)plane of Vo2 to match the latticeof sapphire,therefore,it is impossible to deposit single crystal thin film on (1120)sapphireas observed in the study .During the phase transition,the electrical resistivity changes aboutfour orders.