Preparation and Characterization of Room Temperature NO_2 Sensitive Y_2O_3-SnO_2 Sol-Gel Thin Films

Pure and Y2O3 doped SnO2 gas sensitive thin films were prepared by the sol-gel technique by using non-alkoxide SnCl2·2H2O ) Y(NO3)3·6H2O as precursors. The thermal decomposition and crystallization process of 1mol%Y2O3-SnO2 thin films and the effect of doping amount on the electrical and gas sensitive properties of SnO2 thin films were studied. The Y2O3SnO2 film shows novel gas sensing properties (good sensitivity, high selectivity and quick response behavior) toward low concentration of NO2 at room temperature.