γ-LiAlO_2 Layer on (0001) Sapphire Fabricated by Vapor Transport Equilibration

Using vapor transport equilibration(VTE) technique and post-annealing processing, we succeeded in the fabrication of γ-LiAlO2 layer with a highly-preferred orientation of [100] on (0001) sapphire crystal. X-ray diffraction indicates that the as-fabricated layer by VTE is a polycrystalline film shown to be a single-phase. When the γ-LiAlO2 layers are annealed at 850- 900℃ for about 120 hours in air, the layers become highly textured with [100] orientation. These results reveal the possibility of fabricating γ-LiA102 (100)// sapphires(0001) composite substrate for GaN-based epitaxial film by VTE.