Influence of Si~(4+) Ion on Scintillation Properties and Radiation Hardness of Y~(3+) Doping PbWO_4 Crystals

Based on the fact that the exceptional irradiation behaviors are prominent at the top part of Y3+ doping PWO crystals while exposed to low dose rate γ-ray, previous studies concluded that this phenomenon was caused by enrichment of impurities such as Na+, K+ and Si4+ whose segregation coefficient are smaller than 1. In this paper, the relationships among annealing, optical transmission and radiation hardness of Si4+ ion contained Y3+: PWO crystals were investigated. The experimental results show that the Si4+ ions do not influence optical transmission and radiation hardness of Y3+: PWO crystals at the concentration involved in the study. It can be concluded that the exceptional irradiation behaviors of Y3+: PWO crystals do not relate to the contamination of Si4+ ion.