article·2003-01-01

Growth and Scintillation Properties of Cerium-doped Lutetium Oxyorthosilicate(Lu_2SiO_5:Ce) Crystals

Guobin Ren

Abstract

Cerium-doped lutetium oxyorthosilicate (LSO) crystal with the dimension of φ35mm× 40mm was grown by using the Czochralsky method. Due to cerium ion doping, its absorption edge shifts from 195nm of undoped LSO crystal to 380nm. The intensities of ultraviolet excitation wavelength of LSO:Ce decrease by degrees of 380,332,319 and 216nm. The emission of LSO:Ce crystals has the characteristic of band emission and the emission wavelength spans from 390nm to 560nm. The X-ray excited emission also has band characteristics with two peaks of 390 and 426nm. These luminescence properties are related to the electronic transition of Ce3+ ion from its excited 5d levels to two split ground state levels of 4f as well as the existence of two luminescence centers of Ce3+ ion in LSO lattice.
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Research context

OpenAlex topics: Radiation Detection and Scintillator Technologies · Luminescence Properties of Advanced Materials · Advanced Semiconductor Detectors and Materials

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