article·1997-01-01

Reaction Process and Characteristics of Microstructure of AlN Composite Synthesized by Lanxide Method

Qu Wang, Qi Gao

Abstract

The growth process of AlN synthesized by Lanxide method was studied. XRD analysis shows that AlN crystal grows in a specific direction [0001]. During nitridation, AlN crystal grew from the metal base surface toward atmosphere, then formed a parallel and rod-like microstructure. Durillg initia1 reaction, there was a significant Mg-evaporation phenomenon, and magnesium gas reacted with nitrogen or oxygen to form a porous and loosen surface layer. It was also found that there was a Si-rich process during nitridation which caused composition unhomogenity in product.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials

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