Influence of Growth Temperature and Oxygen Pressure on Laser-induced Voltage Effect of La0.67Sr0.33MnO3:Ag0.08 Thin Films

La0.67Sr0.33MnO3:Ag0.08 (LSMO:Ag0.08) polycrystalline ceramics were prepared by chemical co-precipitation method, and then La0.67Sr0.33MnO3:Ag0.08 thin films were prepared on vicinal cut LaAlO3 (LAO) substrates by pulsed laser deposition (PLD) technique. Effects of growth temperature and oxygen pressure on structure, electrical transport properties and laser-induced voltage (LIV) effect were investigated. The results show that the maximum LIV peak (Up), the figure of merit (Fm) and anisotropy Seebeck coefficient (S) are obtained for LSMO:Ag0.08 thin films when growth temperature and oxygen pressure are 790 and 45 °C Pa, respectively. The LIV enhancement of LSMO:Ag0.08 thin films is due to the anisotropy of the Seebeck coefficient, which is produced by long range cooperative Jahn-Teller distortions under optimal growth temperature and oxygen pressure conditions.