Study on the Near-infrared Absorption Properties of ZnGeP2 Single Crystals
Source abstract
Abstract
采用布里奇曼法生长了磷化锗锌晶体, 晶体毛坯尺寸达直径20mm×90mm, 选取晶体尾部、晶体中部、籽晶端三个部位厚度为4.0mm的抛光晶片作为测试样品. 从实验和理论上研究与分析了晶体的近红外吸收特性. 实验结果显示: 晶体透过率由尾部至近籽晶端逐渐增大, 表明晶体近红外吸收由尾部至近籽晶端逐渐减小, 这是由于晶体内缺陷密度发生了改变, 且晶体内本征点缺陷分布比例不均衡, 进而导致晶体的近红外吸收产生差异. 理论上计算了磷化锗锌晶体施主缺陷和受主缺陷的吸收光谱. 计算结果表明: 受主缺陷对磷化锗锌晶体吸收光谱产生的影响大于施主缺陷.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (20)
Show source-provided references
1. Halliburton L E10.1063/1.113120 ↗
2. Jiang X S
3. Setzler S D10.1063/1.123504 ↗
4. Kaufmann U10.1063/1.89059 ↗
5. Segall M D
6. Giles N C10.1117/12.206468 ↗
7. Lind M D10.1063/1.1678930 ↗
8. Zhao Xin10.1016/j.jcrysgro.2008.08.065 ↗
9. Zawilski K T10.1016/j.jcrysgro.2007.11.151 ↗
10. Hopkins F K
11. Gehlhoff W10.1016/S0022-3697(03)00063-5 ↗
12. Tsveybak I10.1063/1.112555 ↗
13. Schunemann P G10.1016/j.jcrysgro.2005.11.017 ↗
14. Zapol P10.1063/1.360811 ↗
15. Fiechter S
16. Verozubova G A10.1134/S1063774508010215 ↗
17. Brudnyi V N10.1134/S1063783406110060 ↗
18. Lind M D10.1063/1.1678930 ↗
19. Giles N C10.1063/1.113358 ↗
20. Yao Baoquan10.3788/COL20080601.0068 ↗