Effects of Niobium-Doping on the Structure and Electrical Properties of (Ba,Bi,Na)TiO3-based PTcR Ceramics
Source abstract
Abstract
采用固相反应法制备了施主掺杂浓度不同的Nb2O5(分别为0.1mol%、0.3mol%、0.5mol%、0.7mol%)掺杂(Ba,Bi,Na)TiO3基PTCR陶瓷.对其微观结构及电性能进行研究发现:随着Nb2O5掺杂浓度的增加,陶瓷晶粒尺寸先变大后变小,室温电阻率也随之先减小后增大,说明Nb2O5的掺杂量存在一个临界施主掺杂浓度.当Nb2O5施主掺杂量为临界施主掺杂浓度0.5mol%时,获得了居里温度Tc为183℃、室温电阻率ρ为1.06×10^3Ω.cm、升阻比ρmax/ρmin为1.0×10^4的高温无铅PTCR陶瓷.通过交流复阻抗谱分析,探讨了Nb2O5施主掺杂在该PTCR陶瓷中的作用机理.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Transition Metal Oxide Nanomaterials · Semiconductor materials and interfaces · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (9)
Show source-provided references
1. Kurata N10.1111/j.1151-2916.1993.tb03947.x ↗
2. Al-Allak H M10.1007/BF01154017 ↗
3. Xiang Ping-Hua10.1063/1.2799878 ↗
4. Kimura T10.1111/j.1151-2916.1990.tb05102.x ↗
5. Hayashi K10.1111/j.1151-2916.1996.tb08780.x ↗
6. Sinclair D C10.1063/1.2799878 ↗
7. Huybrechts B10.1007/BF00362121 ↗
8. Saburi O10.1143/JPSJ.14.1159 ↗
9. Kuwabara M10.1111/j.1151-2916.1983.tb10578.x ↗