Effects of Annealing Temperatures on Resistive Switching Characteristics of TiO2 Based ReRAM
Source abstract
Abstract
采用直流磁控溅射法在n + -Si上制备了TiO2薄膜, 采用电子束蒸发镀膜仪在TiO 2 薄膜上沉积Au电极, 获得了Au/TiO 2 /n + -Si结构的器件. 研究了退火温度对薄膜结晶性能及器件电阻开关特性的影响. Au/TiO2/n+-Si结构的器件具有单极性电阻开关特性, 置位(set)电压, 复位(reset)电压、reset电流及功率的大小随退火温度的不同而不同, 并基于灯丝理论对器件的电阻开关效应的工作机理进行了探讨. 研究结果表明, 500℃退火的器件具有良好的非易失性. 器件高低阻态的阻值比大于10 3 , 其信息保持特性可达10年之久. 在读写次数为100次时, 器件仍具有电阻开关效应.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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