Fabricating RE2Zr2O7 Buffer Layers by Low Cost Electrodeposition
Source abstract
Abstract
为了降低第二代高温超导涂层导体的制备成本, 采用电化学法(ED), 在双轴织构的Ni-5at%W (Ni-5W)金属基带上分别成功制备出了具有较好c轴取向的La 2 Zr 2 O 7 (LZO)和Gd 2 Zr 2 O 7 (GZO)缓冲层. 通过与磁控溅射方法(MS)相结合, 制备出MS-CeO 2 /ED-RE 2 Zr 2 O 7 双层结构, 用以取代完全用磁控溅射方法(MS)制备的多层缓冲层结构. 电化学法得到的 60 nm LZO缓冲层的面内和面外织构半高宽分别为7.2°和6.8°, 同样厚度的GZO缓冲层的面内和面外半高宽分别为6.7°和5.8°. 之后用脉冲激光沉积(PLD)在ED-LZO/Ni-5W, ED-GZO/Ni-5W, MS-CeO 2 /ED-LZO/Ni-5W 三种结构的缓冲层上分别制备出具有超导性能的YBa 2 Cu 3 O 7- δ (YBCO)超导层.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Condensed Matter Physics · Magnetic and transport properties of perovskites and related materials · Physics of Superconductivity and Magnetism
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