Numerical Simulation of a Czochralski Silicon Crystal Growth with a Large Diameter 300mm Under a Cusp Magnetic Field

The growth of a 300mm large diameter single crystal silicon is one of the active branches in silicon material research and production. It is known from experiments that the shape of the growth interface, the temperature distribution in the melt etc. are sensitive to the melt motion. However it is quite difficult to experimentally visualize the convection of melt, temperature and oxygen field. Thus it is extremely difficult to quantitatively determine how melt motion influence the quality of crystal by experiments. Numerical simulations can provide detailed . information of melt motion, distribution of temperature and so on, which can guide the growth of silicon. In this paper, a low Reynolds number K-e model was used for the simulation of a 300mm large diameter silicon crystal growth. The velocity field and temperature field with and without a cusp magnetic field were visualized. Through this study how a cusp magnetic field influences the melt convection was clarified.