APS Bias Voltage on Properties of HfO$lt;inf$gt;2$lt;/inf$gt; Laser Films Deposited by Reactive Plasma Ion Assisted Electron Evaporation
Source abstract
Abstract
1 (1. , , 201800; 2. , 200444) : HfO 2 (Laser Induced Damage Threshold, LIDT), , (Hf)(O 2 ) 1064 nm, 4H HfO 2 ; ; XRD
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis · Electron and X-Ray Spectroscopy Techniques
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