Effect of Hydrogen and Cu Interlayer on the Optical and Electrical Properties of GZO Thin Film

By method of magnetron sputtering, GZO thin films were deposited in H2+Ar atmosphere and GZO/Cu/GZO thin films were deposited in Ar atmosphere. Effects of H2 flux and Cu interlayer thickness on the opti- cal and electrical properties of the films were investigated, respectively. Furthermore, GZO/Cu/GZO films were also deposited in H2+Ar and the properties of films were investigated as a function of Cu interlayer thickness. The results show that introduction of H2 into deposition atmosphere can effectively decrease the resistivity and enhance the transmittance of GZO films. The best figure of merit is obtained for the films deposited at H2 flux of 20 sccm. With increasing Cu interlayer thickness, both the resistivity and transmittance of the GZO/Cu/GZO multilayer film are decreased. After introducing H2 into deposition atmosphere, the transmittance of GZO/Cu/GZO multilayer film is remarkably de- creased although its resistivity is further decreased with increasing Cu interlayer thickness. In addition, it is found that the energy gap (Eg) of the films increases with H2 flux increasing, while it decreases with Cu interlayer thick-