Preparation and Luminescence Properties of Lu$lt;inf$gt;2$lt;/inf$gt;SiO$lt;inf$gt;5$lt;/inf$gt;: Ce$lt;sup$gt;3+$lt;/sup$gt; Thin Film
Source abstract
Abstract
Lu 2 SiO 5 : Ce 3+ thin film is a promising material for X-ray detection due to its high light output, short decay time, high density, and high spatial resolution. In present work, Lu 2 SiO 5 : Ce 3+ thin films were prepared by Sol-Gel method. The optimal experimental conditions were obtained concerning solid content, adhesive content, water content, and annealing progress. Under the conditions with air humidity of 85%, sol's H 2 O-Si ratio of 6.6, appropriate amount of PEG400, optimized solid content, and sintering starting from 450, the thin films are prepared crack-free with high transparence and excellent luminescent properties. The thickness of its single layer is 167 nm.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Luminescence Properties of Advanced Materials · Lanthanide and Transition Metal Complexes · Radioactive element chemistry and processing
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