Imprint Properties of Yttrium Modified PZT Thin Films
Source abstract
Abstract
Imprint failure is one of the important failure mechanisms for PZT nonvolatile memo- ries. The imprint properties of Y-dopped PZT(40/60) thin films at bias voltages and a temperature of 120℃ were investigated. The results obtained show that the imprint-resistant properties of the PZT thin films are enhanced by a suitable Y dopant concentration.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nanofabrication and Lithography Techniques · Metal and Thin Film Mechanics · Copper Interconnects and Reliability
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