Study on the Resistive Switching Behaviors of TiO_2 Thin Films by Pulsed Laser Deposition

The TiO2 thin films with resistive switching behaviors were grown on Pt(111)/Ti/SiO2/Si substrates by pulsed laser deposition(PLD).Scanning electrical microscope(SEM) and atomic force microscope(AFM) were employed to characterize the as-grown films respectively.No evident diffraction peak of TiO2 is found in X-ray diffraction(XRD) pattern.The films exhibit nanocrystalline or noncrystalline.The results show that the surfaces of the films are flat,smooth and dense.The results of electrical test indicate that TiO2 thin films show a unipolar resistive switching behavior,and the high-resistance to low-resistance ratio can reach 104.The electrical conduction of the films at high resistance state is controlled by the space charge limited current mechanism,and the soft-set phenomenon is found.The formation and rupture of conducting filaments in TiO2 thin films are preliminarily analyzed.